Leibniz-Institut für Kristallzüchtung

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Toward a Reliable Synaptic Simulation Using Al-Doped HfO₂ RRAMS. Roy, Gang Niu, Qiang Wang, Yankun Wang, Yijun Zhang, Heping Wu, Shijie Zhai, Peng Shi, Sannian Song, Zhitang Song, Zuo-Guang Ye, Christian Wenger, Thomas Schroeder, Ya-Hong Xie, Xiangjian Meng, Wenbo Luo, and Wei RenACS Appl. Mater. Interfaces, ACS Appl. Mater. Interfaces 12 (2020) 10648–10656

AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxyS. Walde, S. Hagedorn, P.-M. Coulon, A. Mogilatenko, C. Netzel, J. Weinrich, N. Susilo, E. Ziffer, L. Matiwe, C. Hartmann, G. Kusch, A. Alasmari, G. Naresh-Kumar, C. Trager-Cowan, T. Wernicke, T. Straubinger, M. Bickermann, R.W. Martin, P. A. Shields, M. Kneissl, M. WeyersJournal of Crystal Growth 531 (2020) 125343

Ti- and Fe-related charge transition levels in β−Ga₂O₃Ch. Zimmermann, Ymir Kalmann Frodason , Abraham Willem Barnard, Joel Basile Varley , Klaus Irmscher , Zbigniew Galazka , Antti Karjalainen , Walter Ernst Meyer , Francois Danie Auret, and Lasse VinesAppl. Phys. Lett., 116, (2020), 072101

Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)M. Budde, M.Budde, T. Remmele, C.Tschammer, J. Feldl, P. Franz, J. Lähnemann, Z. Cheng, M. Hanke, M. Ramsteiner, M. Albrecht ,and O. BierwagenJ. Appl. Phys. 127 (2020) 015306

Diode‐Pumped Laser Operation of Tb³⁺:LiLuF₄ in the Green and Yellow Spectral RangeE. Castellano-Hernández, Sascha Kalusniak, Philip W. Metz, Christian KränkelLaser Photon. Rev. 14 (2) (2020), 1900229

Czochralski-grown bulk β-Ga₂O₃ single crystals doped with mono-, di-, tri-, and tetravalent ionsZ. Galazka, Klaus Irmscher, Robert Schewski, Isabelle M. Hanke, Mike Pietsch, Steffen Ganschow, Detlef Klimm, Andrea Dittmar, Andreas Fiedler, Thomas Schröder, Matthias BickermannJournal of Crystal Growth 529 (2020) 125297

Dynamical X-ray diffraction imaging of voids in dislocation-free high-purity germanium single crystalsK.-P. Gradwohl, A.N. Danilewsky, M. Roder, M Schmidbauer, J. Janicsko-Csathy, A. Gybin, N. Abrosimov, R.R. SumathiJ. Appl. Cryst. 53 (2020) 880-884

Sensitization of SnO₂ Single Crystals with Multidentate-Ligand- Capped PbS Colloid Quantum Dots to Enhance the Photocurrent StabilityG. Li, Qian Yang,Lenore Kubie, Joshua T. Stecher, Zbigniew Galazka, Reinhard Uecker, and Bruce A. ParkinsonChemNanoMat 6 (2020) 461-469

Substrate-orientation dependence of ß-Ga₂O₃ (100), (010), (001), and (201) homoepitaxy by indium-mediated metalexchange catalyzed molecular beam epitaxy (MEXCAT-MBE)P. Mazzolini, A. Falkenstein , C. Wouters , R. Schewski , T. Markurt, Z. Galazka , M. Martin , M. Albrecht , and O. BierwagenAPL Materials 8 (2020) 011107

Controlling the thermoelectric power of silicon–germanium alloys in different crystalline phases by applying high pressureN. V. Morozov, Igor V. Korobeinikov, Nikolay V. Abrosimov, and Sergey V. OvsyannikovCrystEngComm 22 (2020) 5416

Identification of the donor and acceptor states of the bond-centered hydrogen– carbon pair in Si and diluted SiGe alloysR. Stübner, Vl. Kolkovsky, J. Weber , N. V. Abrosimov, C. M. Stanley , D. J. Backlund, and S. K. EstreicherJournal of Applied Physics, Journal of Applied Physics 127 (2020) 045701

Local Electronic Structure in AlN Studied by Single-Crystal ²⁷Al and ¹⁴N NMR and DFT CalculationsO. E. O. Zeman, Igor L. Moudrakovski, Carsten Hartmann, Sylvio Indris, Thomas BräunigerMolecules 25(3) (2020) 469

Influence of uniaxial stress on phonon-assisted relaxation in bismuth-doped siliconR. Kh. Zhukavin, S. G. Pavlov, N. Stavrias, K. Saeedi, K. A. Kovalevsky, P. J. Phillips, V. V. Tsyplenkov, N. V. Abrosimov, H. Riemann, N. Deβmann, H.-W. Hübers, V. N. Shastin Journal of Applied Physics 127 (2020) 035706

Relaxation Times and Population Inversion of Excited States of Arsenic Donors in GermaniumR. Kh. Zhukavin, K. A. Kovalevskii, Yu. Yu. Choporova, V. V. Tsyplenkov, V. V. Gerasimov, P. A. Bushuikin, B. A. Knyazev, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, V. N. ShastinJETP Letters 110 (2019) 677–682

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