Leibniz-Institut für Kristallzüchtung
8. IKZ Summer Course on Crystal Growth 2015
Defect formation during crystal growth from melt and selected epitaxial processes
Lector:
Prof. Dr. Peter Rudolph
Crystal Technology Consulting, Schünefeld (DE)
contact person:
Prof. Dr. Matthias Bickermann
matthias.bickermann@ikz-berlin.de
8. IKZ Summer Course on Crystal Growth 2015
"Defect formation during crystal growth from melt and selected epitaxial processes"Lecturer: Prof. Dr. habil. Peter Rudolph, Crystal Technology Consulting, Schünefeld |
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July 13.-15., 2015 |
Participants of the EU CHEETAH project: please follow the link behind the CHEETAH-logo for additional information! |
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This lecture course gives an overview of the important defect types, their origins and interactions
during the bulk crystal growth from the melt and selected epitaxial processes. The equilibrium and
nonequilibrium thermodynamics, kinetic and interaction principles are considered as driving forces
of defect generation, incorporation and ensembling. Results of modeling and practical in situ
control
are presented. Strong emphasis is given to semiconductor crystal growth since it is from this class
of materials that most has been first learned, the resulting knowledge then having been applied to
other classes of material.
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The treatment starts with melt-structure considerations and zero-dimensional defect types, i.e.
native and extrinsic point defects. Their generation and incorporation mechanisms are discussed.
Micro- and macro-segregation phenomena - striations and the effect of constitutional supercooling -
are added. Dislocations and their patterning are discussed next as a central course theme. The role
of high-temperature dislocation dynamics for collective interactions, like cell structuring and
bunching,
is specified. Additionally, some features of epitaxial dislocation kinetics and engineering are
illustrated.
Next the grain boundary formation mechanisms, such as dynamic polygonization and interface
instabilities,
are discussed. The interplay between facets, inhomogeneous dopant incorporations and twinning is
shown.
Finally, second phase precipitation and inclusion trapping are discussed. The importance of in situ
stoichiometry control is underlined. Generally, selected measures of defect engineering are given at
the end of each chapter.
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Prof. Peter Rudolph, Professor Dr. habil, Dr. Ing., was born at July 1st, 1945 in Gera (Germany).
After high-school graduation 1964 in Berlin and subsequent study at the Technical University of
Lviv (Ukraine) he received the Diploma of Electronic Technology in 1969. The PhD (Dr. Engineer)
of Solid State Physics and Technology he obtained at the same university in 1972.
From 1973 to 1993 he was employed at the Institute of Crystallography and Material Science of
the Humboldt University in Berlin.
In 1978 he prepared μg-crystal growth experiments for the first German manned space flight.
In 1979 he obtained the DSc (Dr. habil) of Crystallography at the Humboldt University.
Here, in 1980 he became the head of the Laboratory of bulk Crystal Growth and in 1985 the
university professor position.
From 1991 to 1993 he was member of the expert group of the ESA on μg-melt growth experiments.
From 1993 to 1994 and in 1998 he held guest professorships at the Institute for Material Research
of the Tohoku University in Sendai (Japan). During these times he also co-laborated with numerous
Japanese Companies.
Then, from 1994 to 2011 he was employed at the Leibniz Institute of Crystal Growth (IKZ) in Berlin.
After his retirement in 2011 he is still related active as crystal technology consultant (CTC)
for research and industry.
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He published about 300 original papers, reviews, book contributions, and is co-author of 35
patents. Recently he edited the 2-nd volume of Elsevierüs Handbook of Crystal Growth. He held
diverse guest lecture courses in more than 15 countries around the world. He acted also as
lecturer of several International Schools on Crystal Growth of the IUCr and IOCG.
Peter Rudolph has held various functions in the VfK (secretary), DGKK (president, head of
working group), IUCr and IOCG (executive committee).
In 2001 and 2008 his former teams won the Innovation Prize of Berlin-Brandenburg.