Crystal growth is continuing to shape the foundation of major advances in technology. We are delighted to anounce the next IWCGT to take place in Berlin-Adlershof, Germany, from June 8-11, 2026, hosted by IKZ.
The workshop is organized by IKZ and under the auspices of IOCG and DGKK.
Registration is open and abstracts are welcome.
+++ Abstract deadline is postponed to April 20, 2026 +++
Venue
Max-Born-Saal
Max-Born-Str. 2 A
12489 Berlin
About IWCGT-9
The workshop - the ninth of its series initiated by Hans Scheel and Tsuguo Fukuda - is devoted to Crystal Growth Technology, which also covers industrial scale technologies and equipment. The focus lies on the preparation of bulk and substrate crystals. The workshop aimed to provide links between R & D and actual production, besides bridging science and practice. International experts will present topical lectures with additional time allotted for discussions and debate. Attendees present their research at the evening poster sessions.
Topics of the workshop include for example:
- Growth technology for crystals for electronics and photovoltaics (Si, Ge, III-Vs, etc.)
- Substrate crystals for wide bandgap semiconductors (sapphire, SiC, GaN, AlN, Ga2O3, diamond, etc.)
- Growth of piezoelectrics, lasers, optical and luminescent materials, etc.
- Crystals for scintillators, detectors and large-scale facilities (halides, CdTe, KDP, etc.)
- Modeling, machine learning, AI and process control in crystal growth
- Tools and technologies for crystal growth (novel approaches, equipment, source and hot zone materials)
- Concepts and experience in crystal growth technologies going commercial
We are very pleased to invite you to this important workshop and experts gathering! Please save the date and share this information with interested colleagues.
Schedule
Monday, June 8
12 pm | Reception
1 pm | Welcome
1:30 pm | "Fluoride Crystal growth for Optical and Laser Applications"
Hiroki Tanaka (Leibniz-Institut für Kristallzüchtung (IKZ), Berlin, Germany)
2:30 pm | "Large Ti-doped sapphire grown by modified Kyroupolos technique for high power laser application"
Kheirreddine Lebbou (University Lyon, France)
3.30 pm | Break
4 pm |"III-V-Semiconductor Bulk Crystals – Applications, Scalability and Recent Developments"
Stefan Eichler (Freiberger Compound Materials, Germany)
5 pm | "Technology, Status and Open Issues in SiC Bulk Crystal Growth"
Peter Wellmann (Friedrich-Alexander-Universität Erlangen-Nürnberg, Germany)
6 pm | Break
Tuesday, June 9
9 am | “Sapphire and YAG by Horizontal Bridgman”
Juraj Kajan (AT Crystals, Slovakia)
10 am | "Crystal Growth Equipment Manufacturing"
Anis Jouini (ECM Greentech, France)
11 am | Break
11:30 am | "Current Trends in Crystal Growth Modeling and the Role of Specialized Software"
Andrey Smirnov (STR Software, Germany)
12:30 pm | Lunch
2 pm | Postersession 1
3:30 pm | „Modeling PVT Crystal Growth of SiC”
Lorenz Romaner (Montanuniversität Leoben, Austria)
4:30 pm | "Silicon for Photovoltaics"
Rick Schwerdtfeger (NexWafe, Germany)
5:30 pm | “Numerical investigations of crystal growth of Si and Ga2O3 for AI and power devices”
Koichi Kakimoto (Tohoku University, Japan)
Wednesday, June 10
9 am | “AlN Substrates by PVT”
Thomas Straubinger (Leibniz-Institut für Kristallzüchtung (IKZ), Berlin, Germany)
10 am | “Crucible-free Growth of Oxide Single Crystals”
Akira Yoshikawa (IMR Tohoku University, Japan)
11 am | Break
11:30 am | “Step flow on vicinal crystal surfaces: interaction with threading dislocations and additive trapping”
Peter Rudolph (Crystal Technology Consulting, Germany)
12:30 pm | Lunch
2 pm | Postersession 2
3:30 pm | “Semiconductor Surfaces: special system - their basic properties and their consequences to crystal growth of bulk crystals and epitaxial layers”
Stanislaw Krukowski & Pavel Strak (IHPP Unipress Warsaw, Poland)
4:30 pm | “Li2MoO4 Detector Crystals”
Matias Velazquez (SIMaP University Grenoble, France)
5:30 pm | “Halide Single Crystals for Scintillators”
Mariya Zhuravleva, University of Tennessee, Knoxville, USA)
Thursday, June 11
9 am | “Crystal Growth Euipment, tba”
Benedikt Kramm & Dennis Seibert (PVA TePla, Germany)
10 am | “Ammonothermal Growth”
Siddha Pimputkar (Lehigh University, USA)
11 am | Break
11:30 am | N.N
12:30 pm | End

