Crystal growth is continuing to shape the foundation of major advances in technology. We are delighted to anounce the next IWCGT to take place in Berlin-Adlershof, Germany, from June 8-11, 2026, hosted by IKZ.
The workshop is organized by IKZ and under the auspices of IOCG and DGKK.
Registration is open and abstracts are welcome.
Venue
Max-Born-Saal
Max-Born-Str. 2 A
12489 Berlin
About IWCGT-9
The workshop - the ninth of its series initiated by Hans Scheel and Tsuguo Fukuda - is devoted to Crystal Growth Technology, which also covers industrial scale technologies and equipment. The focus lies on the preparation of bulk and substrate crystals. The workshop aimed to provide links between R & D and actual production, besides bridging science and practice. International experts will present topical lectures with additional time allotted for discussions and debate. Attendees present their research at the evening poster sessions.
Topics of the workshop include for example:
- Growth technology for crystals for electronics and photovoltaics (Si, Ge, III-Vs, etc.)
- Substrate crystals for wide bandgap semiconductors (sapphire, SiC, GaN, AlN, Ga2O3, diamond, etc.)
- Growth of piezoelectrics, lasers, optical and luminescent materials, etc.
- Crystals for scintillators, detectors and large-scale facilities (halides, CdTe, KDP, etc.)
- Modeling, machine learning, AI and process control in crystal growth
- Tools and technologies for crystal growth (novel approaches, equipment, source and hot zone materials)
- Concepts and experience in crystal growth technologies going commercial
We are very pleased to invite you to this important workshop and experts gathering! Please save the date and share this information with interested colleagues.
Program / Invited Speakers
These international experts (in alphabetical order) have agreed to provide a lecture at IWCGT-9, other are negotiated. Some lecture titles might also be adjusted. We will complete the list to about 20 lectures in the next weeks. Note that the lecturers are determined by the steering committee.
Lecturers (tentative):
- Stefan Eichler, Freiberger Compound Materials (Germany)
"III-V-Semiconductor Bulk Crystals – Applications, Scalability and Recent Developments" - Anis Jouini, ECM Greentech (France)
"Crystal Growth Equipment Manufacturing" - Juraj Kajan, AT Crystals (Slovakia)
"Sapphire and YAG by Horizontal Bridgman" - Koichi Kakimoto, Tohoku Univ. (Japan)
"Numerical investigations of crystal growth of Si and Ga2O3 for AI and power devices" - Kheirreddine Lebbou, Univ. Lyon (France)
"Large Ti-doped sapphire grown by modified Kyroupolos technique for high power laser application" - Siddha Pimputkar, Lehigh Univ. (USA)
"Ammonothermal Growth" - Lorenz Romaner, Univ. Leoben (Austria)
„Modeling PVT Crystal Growth of SiC” - Rick Schwerdtfeger, NexWafe (Germany)
"Silicon for Photovoltaics" - Andrey Smirnov, STR Software (Germany)
"Current Trends in Crystal Growth Modeling and the Role of Specialized Software" - Thomas Straubinger, IKZ (Germany)
"AlN Substrates by PVT" - Hiroki Tanaka, IKZ (Germany)
"Fluoride Crystal growth for Optical and Laser Applications" - Matias Velazquez, SIMaP Univ. Grenoble (France)
“Li2MoO4 Detector Crystals” - Peter Wellmann, Univ. Erlagen (Germany)
"Technology, Status and Open Issues in SiC Bulk Crystal Growth" - Akira Yoshikawa, IMR Tohoku Univ. (Japan)
"Crucible-free Growth of Oxide Single Crystals" - Mariya Zhuravleva, Univ. Tennessee (USA)
“Halide Single Crystals for Scintillators”

