Leibniz-Institut für Kristallzüchtung

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Step pinning and hillock formation in (Al,Ga)N films on native AlN substratesT. Schulz, S.-H. Yoo, L. Lymperakis, C. Richter, E. Zatterin, A. Lachowski, C. Hartmann, H. M. Foronda, C. Brandl, H. J. Lugauer, M. P. Hoffmann, M. Albrecht J. Appl. Phys. 132 (2022) 223102

Thermal Activation of Valley-Orbit States of Neutral Magnesium in SiliconR.J.S. Abraham, V.B. Shuman, L.M. Portsel, A.N. Lodygin, Yu.A. Astrov, N.V. Abrosimov, S.G. Pavlov, H.-W. Hübers, S. Simmons, M.L.W. ThewaltSemiconductors 56 1 (2022) 59-62

Laser cooling in Yb:KY₃F₁₀: a comparison with Yb:YLFS. Püschel, F. Mauerhoff, C. Kränkel, H. TanakaOpt. Express 30 (2022) 47235-47248

Boron-doped silicon: a possible way of testing and refining models of non-ionizing energy loss under electron- and proton irradiationV.V. Emtsev, N.V. Abrosimov, V.V. Kozlovski, S.B. Lastovskii, G.A. Oganesyan, D.S. Poloskin, A.A. Aref’evPhysics of the Solid State 12 (2022) 1878

Application of optical velocity measurements including a novel calibration technique for micron-resolution to investigate the gas flow in a model experiment for crystal growth F. Burkle, M. Forste, K. Dadzis, I. Tsiapkinis, O. Patzold, A. Charitos, M. Dues, J. Czarske, L. Buttner, Flow Meas. Instrum. 88 (2022) 102258

Smart Design of Cz-Ge Crystal Growth Furnace and ProcessN. Dropka, X. Tang, G. K. Chappa, M. HolenaCrystals 12 (2022) 1764

Strain Relaxation of Si/SiGe Heterostructures by a Geometric Monte Carlo ApproachK.-P. Gradwohl, C.-H. Lu, Y. Liu, C. Richter, T. Boeck, J. Martin, M. AlbrechtPhys. Status Solidi RRL (2022) 2200398

Epitaxial growth of the first two members of the Ba_n+1In_nO_{2.5 n+1} Ruddlesden–Popper homologous seriesF. V. E. Hensling, M. A. Smeaton, V. Show, K. Azizie, M. R. Barone, L. F. Kourkoutis, D. G. SchlomJ. Vac. Sci. Technol. A 40 (2022) 062707

Cobalt as a promising dopant for producing semi-insulating β-Ga₂O₃ crystals: Charge state transition levels from experiment and theoryP. Seyidov, J. B. Varley, Z. Galazka, T.-S. Chou, A. Popp, A. Fiedler, K. IrmscherAPL Mater. 10 (2022) 111109

Fingerprints of carbon defects in vibrational spectra of GaN considering the isotope effect I. Gamov, J. L. Lyons, G. Gärtner, K. Irmscher, E. Richter, M. Weyers, M. R. Wagner, M. Bickermann Phys. Rev. B 106 (2022) 184110

Low temperature thermoluminescence of β-Ga₂O₃ scintillatorM. E. Witkowski, K. J. Drozdowski, M. Makowski, W. Drozdowski, A. J. Wojtowicz, K. Irmscher, R. Schewski, Z. GalazkaOptical Materials: X 16 (2022) 100210

Coherent control of electron spin qubits in silicon using a global fieldE. Vahapoglu, J. P. Slack-Smith, R. C. C. Leon, W. H. Lim, F. E. Hudson, T. Day, J. D. Cifuentes, T. Tanttu, C. H. Yang, A. Saraiva, N. V. Abrosimov, H.-J. Pohl, M. L. W. Thewalt5, A. Laucht, A. S. Dzurak, J. J. Planpj Quantum Information 8 (2022) 126

Combination of ultrafast time-resolved spectroscopy techniques for the analysis of electron dynamics of heliumlike impurity centers in siliconN. Dessmann, S. G. Pavlov, A. Pohl, V. B. Shuman, L. M. Portsel , A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, B. Redlich, H.-W. HübersPHYSICAL REVIEW B 106 (2022) 195205

X-ray nano-imaging of defects in thin film catalystsvia cluster analysisA. Luo, O. Y. Gorobtsov, J. N. Nelson, D.-Y. Kuo, T. Zhou, Z. Shao, R. Bouck, M. J. Cherukara, M. V. Holt, K. M. Shen, D. G. Schlom, J. Suntivich, A. SingerAppl. Phys. Lett. 121 (2022) 153904

Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light-Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect DensitiesA. Muhin, M. Guttmann, V. Montag, N. Susilo, E. Ziffer, L. Sulmoni, S. Hagedorn, N. Lobo-Ploch, J. Rass, L. Cancellara, S. Wu, T. Wernicke, M. Kneissl Phys. Status Solidi A (2022) 2200458

Detection of Ramsey Oscillations in Germanium Doped with Shallow Donors upon the Excitation of the 1s -> 2p₀ TransitionR. K. Zhukavin, P. A. Bushuikin, V. V. Kukotenko, Y. Y. Choporova, N. Dessmann, K. A. Kovalevsky, V. V. Tsyplenkov, V. V. Gerasimov, B. A. Knyazev, N. Abrosimov, V. N. Shastin, JEPT Lett. 116 (2022) 137–143

What is the speed limit of martensitic transformations?S. Schwabe, K. Lünser, D. Schmidt, K. Nielsch, P. Gaal, S. FählerScience and Technology of Advanced Materials 23 (2022) 633-641

New properties of boron-oxygen dimer defect in boron-doped Czochralski siliconL. I. Khirunenko,1, M. G. Sosnin, A. V. Duvanskii, N. V. Abrosimov, and H. RiemannJournal of Applied Physics 132 (2022) 135703

Numerical Simulation of Species Segregation and 2D Distribution in the Floating Zone Silicon CrystalsK. Surovovs, M. Surovovs, A. Sabanskis, J. Virbulis, K. Dadzis, R. Menzel, N. AbrosimovCrystals 12 (2022) 1718

Quasi-monocrystalline silicon for low-noise end mirrors in cryogenic gravitational-wave detectorsF. M. Kiessling, P. G. Murray, M. Kinley-Hanlon, I. Buchovska, T. K. Ervik, V. Graham, J. Hough, R. Johnston, M. Pietsch, S. Rowan, R. Schnabel, S. C. Tait, J. Steinlechner, I. W. MartinPhys. Rev. Res. 4 (2022) 043043

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