Leibniz-Institut für Kristallzüchtung

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X-Band Parallel-Mode and Multifrequency Electron Paramagnetic Resonance Spectroscopy of S = 1/2 Bismuth CentersJ. Haak, J. Krüger, N. V. Abrosimov, C. Helling, S. Schulz, G. E. Cutsail IIIInorg. Chem. 61 (2022) 11173–11181

Ferroelectric Modulation of Surface Electronic States in BaTiO3 for Enhanced Hydrogen Evolution Activity P. Abbasi, M. R. Barone, Ma. de la Paz Cruz-Jáuregui, D. Valdespino-Padilla, H. Paik, T. Kim, L. Kornblum, D. G. Schlom, T. A. Pascal, D. P. FenningNano Lett. 22 (2022) 4276-4284

High temperature phase transitions in NaNbO₃ epitaxial films grown under tensile lattice strain S. Bin Anooz, Y. Wang, P. Petrik, M. de Oliveira Guimaraes, M. Schmidbauer, J. Schwarzkopf Appl. Phys. Lett. 120 (2022) 202901

Tilted spin current generated by the collinear antiferromagnet ruthenium dioxide A. Bose, N. J. Schreiber, R. Jain, D. Shao, H. P. Nair, J. Sun, X. S. Zhang, D. A. Muller, E. Y. Tsymbal, D. G. Schlom, D. C. RalphNat. Electron. 5 (2022) 267–274

Formation of voids and their role in the recovery of sputtered AlN during high-temperature annealing L. Cancellara, S. Hagedorn, S. Walde, D. Jaeger, M. AlbrechtJ. Appl. Phys. 131 (2022) 215304

Si doping mechanism in MOVPE-grown (100) β-Ga₂O₃ films T. Choua, S. Bin Anooz, R. Grüneberg, N. Dropka, J. Rehm, T. T. V. Tran, K. Irmscher, P. Seyidov, W. Miller, Z. Galazka, M. Albrecht, A. Popp Appl. Phys. Lett. 121 (2022) 032103

Development and validation of a thermal simulation for the Czochralski crystal growth process using model experiments A. Enders-Seidlitz, J. Pal , K. Dadzis J. Cryst. Growth 593 (2022) 126750

Leveraging dewetting models rather than nucleation models: current crystallographic challenges in interfacial and nanomaterials researchO. C. Ernst, Y. Liu, T. BoeckZ. Krist.-Cryst. Mater. 237 (2022) 191-200

Biomolecular control over local gating in bilayer graphene induced by ferritinS. K. Karuppannan, J. Martin, W. Xu, R. R. Pasula, S. Lim, C. A. NijhuisiScience 25 (2022) 104128

Modulation of Spin Dynamics in 2D Transition-Metal Dichalcogenide via Strain-Driven Symmetry BreakingT. Liu, D. Xiang, H. Kuan Ng, Z. Han, K. Hippalgaonkar, A. Suwardi, J. Martin, S. Garaj, and J. WuAdv. Sci, (2022), 2200816

FAIR data enabling new horizons for materials researchM. Scheffler, M. Aeschlimann, M.Albrecht, T. Bereau, H.-J. Bungartz, C. Felser, M. Greiner, A. Groß, C. Koch, K. Kremer, W. E. Nagel, M. Scheidgen, C. Wöll, and C. DraxlNature, 604, p. 635–642 (2022)

Metal-assisted chemically etched silicon nanopillars hosting telecom photon emittersM. Hollenbach, N. S. Jagtap, C. Fowley, et al.J. Appl. Phys. 132, 033101 (2022)

Two inch diameter, highly conducting bulk beta-Ga₂O₃ single crystals grown by the Czochralski method Z. Galazka, S. Ganschow, P. Seyidov, K. Irmscher, M. Pietsch, T. Chou, S. Bin Anooz, R. Grueneberg, A. Popp, A. Dittmar, A. Kwasniewski, M. Suendermann,D. Klimm, T. Straubinger, T. Schroeder, M. BickermannAppl. Phys. Lett. 120 (2022) 152101

Disentangling types of lattice disorder impactingsuperconductivity in Sr₂RuO₄ by quantitativelocal probesB. H. Goodge, H. P. Nair, D. J. Baek, N. J. Schreiber, L. Miao, J. P. Ruf, E. N. Waite, P. M. Carubia, K. M. Shen, D. G. Schlom, L. F. KourkoutisAPL Mater. 10 (2022) 041114

Elevated temperature spectroscopic ellipsometry analysis of the dielectric function, exciton, band-to-band transition, and high-frequency dielectric constant properties for single-crystal ZnGa₂O₄M. Hilfiker, E. Williams, U. Kilic, Y. Traouli, N. Koeppe, J. Rivera, A. Abakar, M. Stokey, R. Korlacki, Z. Galazka, K. Irmscher, M. Schubert Appl. Phys. Lett. 120 (2022) 132105

Molecular beam epitaxy of single-crystalline bixbyite (In_1−xGa_x)₂O₃ films (x≤0.18): Structural properties and consequences of compositional inhomogeneityA. Papadogianni, C. Wouters, R. Schewski, J. Feldl, J. Lähnemann, T. Nagata, E. Kluth, M. Feneberg, R. Goldhahn, M. Ramsteiner, M. Albrecht, O. BierwagenPhys. Rev. Materials 6 (2022) 033604

Single-Crystal Alkali Antimonide Photocathodes: High Efficiency in the Ultrathin LimitC. T. Parzyck, A. Galdi, J. K. Nangoi, W. J. I. DeBenedetti, J. Balajka, B. D. Faeth, H. Paik, C. Hu, T. A. Arias, M. A. Hines, D. G. Schlom, K. M. Shen, J. M. MaxsonPhys. Rev. Lett. 128 (2022) 114801

Terahertz electron paramagnetic resonance generalized spectroscopic ellipsometry: The magnetic response of the nitrogen defect in 4H-SiCM. Schubert, S. Knight, S. Richter, P. Kühne, V. Stanishev, A. Ruder, M. Stokey, R. Korlacki, K. Irmscher, P. Neugebauer, V. DarakchievaAppl. Phys. Lett. 120 (2022) 102101

Canonical approach to cation flux calibration in oxide molecular-beam epitaxyJ. Sun, C. T. Parzyck, J. H. Lee, C. M. Brooks, L. F. Kourkoutis, X. Ke, R. Misra, J. Schubert, F. V. Hensling, M. R. Barone, Z. Wang, M. E. Holtz, N. J. Schreiber, Q. Song, H. Paik, T. Heeg, D. A. Muller, K. M. Shen, D. G. SchlomPhys. Rev. Mater. 6 (2022) 033802

SnO/β-Ga₂O₃ heterojunction field-effect transistors and vertical p–n diodesK. Tetzner, K. Egbo, M. Klupsch, R.-S. Unger, A. Popp, T.-S. Chou, S. Bin Anooz, Z. Galazka, A. Trampert, O. Bierwagen, J. Würfl Appl. Phys. Lett. 120 (2022) 112110

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